TPC8114 2003-07-14 1 toshiba field effect transistor silicon p channel mos type (u-mos ) TPC8114 lithium ion battery applications notebook pc applications portable equipment applications ? small footprint due to small and thin package ? low drain-source on resistance: r ds (on) = 3.1 m ? (typ.) ? high forward transfer admittance: |y fs | = 47 s (typ.) ? low leakage current: i dss = ? 10 a (max) (v ds = ? 30 v) ? enhancement-mode: v th = ? 0.8 to ? 2.0 v (v ds = ? 10 v, i d = ? 1 ma) maximum ratings (ta = 25c) characteristics symbol rating unit drain-source voltage v dss ? 30 v drain-gate voltage (r gs = 20 k ? ) v dgr ? 30 v gate-source voltage v gss 20 v dc (note 1) i d ? 18 drain current pulse (note 1) i dp ?72 a drain power dissipation (t = 10 s) (note 2a) p d 1.9 w drain power dissipation (t = 10 s) (note 2b) p d 1.0 w single pulse avalanche energy (note 3) e as 211 mj avalanche current i ar ? 18 a repetitive avalanche energy (note 2a) (note 4) e ar 0.19 mj channel temperature t ch 150 c storage temperature range t stg ? 55 to 150 c note: for (note 1), (note 2), (note 3) and (note 4), please refer to the next page. this transistor is an electrostatic sensitive device. please handle with caution. unit: mm jedec D jeita D toshiba 2-6j1b weight: 0.080 g (typ.) circuit configuration 8 6 1 2 3 7 5 4
TPC8114 2003-07-14 2 thermal characteristics characteristics symbol max unit thermal resistance, channel to ambient (t = 10 s) (note 2a) r th (ch-a) 65.8 c/w thermal resistance, channel to ambient (t = 10 s) (note 2b) r th (ch-a) 125 c/w marking (note 5) note 1: please use devices on condition that the channel temperature is below 150c. note 2: (a) device mounted on a glass-epoxy board (a) (b) device mounted on a glass-epoxy board (b) note 3: v dd = ? 24 v, t ch = 25c (initial), l = 500 h, r g = 25 ? , i ar = ? 18 a note 4: repetitive rating; pulse width limited by maximum channel temperature note 5: ? on lower left of the marking indicates pin 1. (b) fr-4 25.4 25.4 0.8 (unit: mm) (a) fr-4 25.4 25.4 0.8 (unit: mm) type TPC8114 lot no. weekly code: (three digits) week of manufacture (01 for first week of year, continues up to 52 or 53) year of manufacture (one low-order digits of calendar year)
TPC8114 2003-07-14 3 electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit gate leakage current i gss v gs = 16 v, v ds = 0 v ? ? 10 a drain cut-off current i dss v ds = ? 30 v, v gs = 0 v ? ? ? 10 a v (br) dss i d = ? 10 ma, v gs = 0 v ? 30 ? ? drain-source breakdown voltage v (br) dsx i d = ? 10 ma, v gs = 20 v ? 15 ? ? v gate threshold voltage v th v ds = ? 10 v, i d = ? 1 ma ? 0.8 ? ? 2.0 v v gs = ? 4 v, i d = ?9 a ? 5.2 6.8 drain-source on resistance r ds (on) v gs = ? 10 v, i d = ?9 a ? 3.1 4.5 m ? forward transfer admittance |y fs | v ds = ? 10 v, i d = ?9 a 23.5 47 ? s input capacitance c iss ? 7480 ? reverse transfer capacitance c rss ? 1320 ? output capacitance c oss v ds = ? 10 v, v gs = 0 v, f = 1 mhz ? 1460 ? pf rise time t r ? 25 ? turn-on time t on ? 36 ? fall time t f ? 235 ? switching time turn-off time t off duty < = = 10 s ? 625 ? ns total gate charge (gate-source plus gate-drain) q g ? 180 ? gate-source charge 1 q gs1 ? 10 ? gate-drain (?miller?) charge q gd v dd ? ? 24 v, v gs = 10 v, i d = ? 18 a ? 60 ? nc source-drain ratings and characteristics (ta = 25c) characteristics symbol test condition min typ. max unit drain reverse current pulse (note 1) i drp ? ? ? ?72 a forward voltage (diode) v dsf i dr = ? 18 a, v gs = 0 v ? ? 1.2 v r l = 1.7 ? v dd ? ? 15 v 0 v v gs ? 10 v 4.7 ? i d = ?9 a v out
TPC8114 2003-07-14 4 ? toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inhe rent electrical sensitivity and vulnerability to physical stress. it is the responsibility of t he buyer, when utilizing toshiba products , to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within s pecified operating ranges as set forth in the most recent toshi ba products specifications. also, pl ease keep in mind the precautions and conditions set forth in the ?handling guide for semicond uctor devices,? or ?toshiba semiconductor reliability handbook? etc.. ? the toshiba products listed in this document are inte nded for usage in general electronics applications (computer, personal equipment, office equipment, measuri ng equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunc tion or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control in struments, airplane or spaceship instruments, transportation instruments, traffic signa l instruments, combusti on control instruments, medical instruments, all types of safety devices, et c.. unintended usage of toshiba products listed in this document shall be made at th e customer?s own risk. ? the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba corporation for any infringements of intelle ctual property or other rights of the third parties which may re sult from its use. no license is grant ed by implication or otherwise under any intellectual property or other right s of toshiba corporation or others. ? the information contained herein is subject to change without notice. 000707ea a restrictions on product use
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